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4 Niederfrequenzverstärker
Audio-Frequency Amplifiers

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4.4
Gegentakt-Leistungsverstärker ohne Ausgangstransformator mit Bipolar-Transistoren
Output-Transformerless Push-Pull Power Amplifiers using Bipolar Transistors

Die Spannungs- und Stromangaben sind als Betrag aufzufassen. Vorzeichen müssen entsprechend Betriebsart und Polarität des Halbleitermaterials gesetzt werden.

Voltage and current ratings are given as magnitude, where the sign has to be set according to operating condition and polarity of the semiconductor material.

Hoch - UpRunter - Down 
2N2147
2N2148
 
Single-Ended Push-Pull Class-B AF-Amplifier
@Tc:
Rate
POUT:
Pc:
UBE:
Ic:
ICM:
GP:
RIN(B):
RL:
k:
@Ucc:
@UEE:
R1:
R2:
R3:
R4:
R5:
R6:
Zn2:
Zn3:
25
TYP
0
-
240
35
-
-
-
4.0
-
22
22
25
12.5
-
1100
3.5
33
75
4.0
5.0
20
20
330
3.9
330
3.9
0.47
0.47
100
100
25
TYP
0
-
260
35
-
-
-
4.0
-
16.5
16.5
15
7.5
-
850
2.7
31
65
4.0
5.0
15
15
270
3.9
270
3.9
0.47
0.47
100
100
°C
 
W
W
mV
mA
A
dB
OHM
OHM
%
V
V
OHM
OHM
OHM
OHM
OHM
OHM
OHM
OHM
Single-Ended Push-Pull Amplifier
Ref *?
Rca70
15041

Hoch - UpRunter - Down 2N2147Beschreibung der Bauteile - Parts Description
R1:330OHM±10%, 2W
R2:3.9OHM±10%, 0.5W
R3:330OHM±10%, 2W
R4:3.0OHM±10%, 0.5W
R5:0.47OHM±10%, 0.5W
R6:0.47OHM±10%, 0.5W
T1:Driver TransformerPrimary-winding impedance (n1), current-carrying capacity, and DC resistance determined by large-signal characteristics of driver stage; secondary windings (n2, n3) bifilar wound.
Hoch - UpRunter - Down 2N2148Beschreibung der Bauteile - Parts Description
R1:270OHM±10%, 2W
R2:3.9OHM±10%, 0.5W
R3:270OHM±10%, 2W
R4:3.0OHM±10%, 0.5W
R5:0.47OHM±10%, 0.5W
R6:0.47OHM±10%, 0.5W
T1:Driver TransformerPrimary-winding impedance (n1), current-carrying capacity, and DC resistance determined by large-signal characteristics of driver stage; secondary windings (n2, n3) bifilar wound.

Hoch - UpRunter - Down 
2N2147
 
High-Quality Power Amplifier
@Tc:
Rate
POUT:
Uin~:
Icc:
RL:
GPn:
k:
UCC2:
@f:
@Ucc:
@UEE:
Gu:
@f:
Gu:
@f:
R10:
R11:
R12:
R13:
R15:
R16:
Zn1:
25
TYP
0
0
0.15
4.0
-
-
20
-
22
22
25
50
1.0
4.0
80
0.5
-
1.0
20
20
–1.0
0.02...20
–2.0
0.015...35
270
270
22
22
0.47
0.47
400
°C
 
W
mV.RMS
A
OHM
dB
%
V
kHz
V
V
dB
kHz
dB
kHz
OHM
OHM
OHM
OHM
OHM
OHM
OHM
Single-Ended Push-Pull Amplifier
Ref *?
Rca70
15041

Hoch - UpRunter - Down 2N2147Beschreibung der Bauteile - Parts Description
C1:5.0µF3V, electrolytic
C2:200µF3V, electrolytic
C3:2.5mF35V, electrolytic
C4:39pFMica
C5:10µF3V, electrolytic
C6:250µF15V, electrolytic
C7:39pFMica
Q1:40329PNP Transistor
Q2:2N3241NPN Transistor
Q3:40428Temperature- and voltage-compensation diode
Q4:40428Temperature- and voltage-compensation diode
Q5:2N2147PNP Transistor
Q6:2N2147PNP Transistor
R1:1.5kOHM0.5W
R2:22kOHM0.5W
R3:270OHM0.5W
R4:1.0kOHM0.5W
R5:56kOHM0.5W
R6:22kOHM0.5W
R7:330OHM1W
R8: OHMSelected to provide UCC2 rating across C3 under zero-signal conditions.
R9:1.0kOHM0.5W
R10:270OHM2W
R11:270OHM2W
R12:22OHM5W
R13:22OHM5W
R14:33kOHM0.5W
R15:0.47OHM0.5W
R16:0.47OHM0.5W
T1:Driver TransformerTurns ratio, primary to each secondary n1/n2 = n1/n3 = 3. Primary DC current-carrying capacity = 0 mA.

POUT = 1.0 ... 2.0 W
Hoch - UpRunter - Down  Rate GP S/N k Uin~ RG @Ub POUT RL f f @P @TA Ref *?
dBdB%mV.RMSkOHMVWOHMkHzkHzdB °C
Q610  TYP-81.510-2.29.01.28.01.00.07
...8.0
3.0 45Sie66
Sie72
Ci4 168
TYP---4.02.29.00.058.01.0--
TYP--4.0222.29.01.08.01.0--
TYP--6.5
4.6
-2.29.01.08.00.1
8.0
--
  Rate GP S/N k Uin~ RG @Ub POUT RL f f @P @TA 18252
dBdB%mV.RMSkOHMVWOHMkHzkHzdB °C
Eisenlose Komplementär-Endstufe - Complementary OTL Power Amplifier
Output-Transformerless Complementary Push-Pull Amplifier
Hoch - UpRunter - Down Q610Beschreibung der Bauteile - Parts Description
C1:-µFElektrolytkondensator - electrolytic
C2:25µFElektrolytkondensator - electrolytic
C3:500µFElektrolytkondensator - electrolytic
C4:10nF 
C5:250µFElektrolytkondensator - electrolytic
C6:500µFElektrolytkondensator - electrolytic
Q1:AC127Q610 (1)
Q2:AC152Q610 (2)
Q3:AC152Q610 (3)
Q4:AC127Q610 (4)
R1:10OHM 
R2:15kOHM 
R3:18kOHM 
R4:2.2kOHM 
R5:1.0kOHM 
R6:470OHM 
R7:1.5kOHM 
R8:150OHMNTC K151.150
R9:39OHM 
R10:47OHM 
R11:500OHM 

POUT = 2.0 ... 5.0 W
Hoch - UpRunter - Down  Rate GP k Uin~ ZIN @UCC POUT RL f f @P GK @TA Ref *?
dB%V.RMSkOHMVWOHMkHzkHzdBdB °C
2SA537 
2SC708
MIN---15355.0161.00.02
...60
2.030 -Hit70
Ci3
TYP670.50.2-
  Rate GP k Uin~ ZIN @UCC POUT RL f f @P GK @TA 17852
dB%V.RMSkOHMVWOHMkHzkHzdBdB °C
Complementary OTL Power Amplifier
Output-Transformerless Complementary Push-Pull Amplifier
Hoch - UpRunter - Down 2SA537Beschreibung der Bauteile - Parts Description
C1:30µF12V, electrolytic
C2:200µF50V, electrolytic
C3:200µF6V, electrolytic
C4:1.0µF25V, electrolytic
C5:10µF25V, electrolytic
C6:50µF15V, electrolytic
C7:100pFMica
C8:250pFMica
C9:1.0mF25V, electrolytic
C10:2.0mF50V, electrolytic
C11:10nF 
Q1:2SC458LGLow-noise NPN transistor
Q2:2SC984NPN transistor
Q3:2SC708NPN transistor on heat sink
Q4:HV26Temperature- and voltage-compensation diode
Q5:2SA537PNP transistor on heat sink
Q6:2SC708NPN transistor on heat sink
R1:22kOHM0.5W
R2:57kOHM0.5W
R3:2.7kOHM0.5W
R4:100OHM0.5W
R5:1.0kOHM0.5W
R6:5.0kOHM0.5W
R7:25kOHM1W
R8:500kOHM0.5W, Symmetry adjust
R9:300OHM2W
R10:4.7kOHM0.5W
R11:30OHM0.5W, Bias adjust
R12:1.0OHM1W
R13:1.0OHM1W
R14:10OHM0.5W

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Copyright © 2015Franz Hamberger, Berlin, Germany

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